Redox method of forming a coaxial probe structure of elongated electrical conductors projecting from a support structure

ABSTRACT

The present invention is directed to structures having a plurality of discrete insulated elongated electrical conductors projecting from a support surface which are useful as probes for testing of electrical interconnections to electronic devices, such as integrated circuit devices and other electronic components and particularly for testing of integrated circuit devices with rigid interconnection pads and multi-chip module packages with high density interconnection pads and the apparatus for use thereof and to methods of fabrication thereof. Coaxial probe structures are fabricated by the methods described providing a high density coaxial probe.

CROSS REFERENCE TO RELATED APPLICATION

The teaching of U.S. application Ser. No. 09/254,768, filed on the sameday herewith entitled, “INTEGRATED COMPLIANT PROBE FOR WAFER LEVEL TESTAND BURNIN” to Brian S. Beaman et al., now U.S. Pat. No. 6,528,984 andthe teaching of U.S. application Ser. No. 09/254,769 filed on the sameday herewith entitled, “WAFER SCALE HIGH DENSITY PROBE ASSEMBLY,APPARATUS FOR USE THEREOF AND METHODS OF FABRICATION THEREOF” to BrianS. Beaman et al., now U.S. Pat. No. 7,282,945 is incorporated herein byreference.

AIA (First Parent Filing Inventor Parent Pat. Description Parent Numberor 371(c) Date to File) Status No. This application is a 12/052,823 Mar.21, 2008 No Pending Division of is a Division of 10/202,069 Jul. 23,2002 No Patented 7,368,924 is a Continuation-in-part 09/921,867 Aug. 03,2001 No Abandoned — of is a continuation of 09/254,798 Mar. 11, 1999 NoPatented 6,452,406 is a National Stage Entry PCT/US97/13698 Sep. 12,1997 — Published — of is a continuation of 08/872,519 Jun. 11, 1997 NoPatented 6,334,247 is a Division of 08/754,869 Nov. 22, 1996 No Patented5,821,763 Claims Priority from 60/026,050 Sep. 13, 1996 — Expired —Provisional Application is a continuation of 08/055,485 Apr. 30, 1993 NoPatented 5,635,846

FIELD OF THE INVENTION

The present invention is directed to structures having a plurality ofdiscrete insulated elongated electrical conductors projecting from asupport surface which are useful as probes for testing of electricalinterconnections to electronic devices, such as integrated circuitdevices and other electronic components and particularly for testing ofintegrated circuit devices with rigid interconnection pads andmulti-chip module packages with high density interconnection pads andthe apparatus for use thereof and to methods of fabrication thereof.

BACKGROUND OF THE INVENTION

Integrated circuit (IC) devices and other electronic components arenormally tested to verify the electrical function of the device andcertain devices require high temperature burn-in testing to accelerateearly life failures of these devices. Wafer probing is typically done ona single chip site at temperatures ranging from 25 C-125 C while burn-inis typically done on diced and packaged chips at temperatures rangingfrom 80C to 150 C. Wafer probing and IC chip burn-in at elevatedtemperatures of up to 200 C has several advantages and is becomingincreasingly important in the semiconductor industry. Simultaneoustesting of multiple chips on a single wafer has obvious advantages forreducing costs and increasing production throughput and is a logicalstep towards testing and burn-in of an entire wafer.

The various types of interconnection methods used to test these devicesinclude permanent, semi-permanent, and temporary attachment techniques.The permanent and semi-permanent techniques that are typically usedinclude soldering and wire bonding to provide a connection from the ICdevice to a substrate with fan out wiring or a metal lead frame package.The temporary attachment techniques include rigid and flexible probesthat are used to connect the IC device to a substrate with fan outwiring or directly to the test equipment.

The permanent attachment techniques used for testing integrated circuitdevices such as wire bonding to a leadframe of a plastic leaded chipcarrier are typically used for devices that have low number ofinterconnections and the plastic leaded chip carrier package isrelatively inexpensive. The device is tested through the wire bonds andleads of the plastic leaded chip carrier and plugged into a test socket.If the integrated circuit device is defective, the device and theplastic leaded chip carrier are discarded.

The semi-permanent attachment techniques used for testing integratedcircuit devices such as solder ball attachment to a ceramic or plasticpin grid array package are typically used for devices that have highnumber of interconnections and the pin grid array package is relativelyexpensive. The device is tested through the solder balls and theinternal fan out wiring and pins of the pin grid array package that isplugged into a test socket. If the integrated circuit device isdefective, the device can be removed from the pin grid array package byheating the solder balls to their melting point. The processing cost ofheating and removing the chip is offset by the cost saving of reusingthe pin grid array package.

The most cost effective techniques for testing and burn-in of integratedcircuit devices provide a direct interconnection between the pads on thedevice to a probe sockets that is hard wired to the test equipment.Contemporary probes for testing integrated circuits are expensive tofabricate and are easily damaged. The individual probes are typicallyattached to a ring shaped printed circuit board and support cantileveredmetal wires extending towards the center of the opening in the circuitboard. Each probe wire must be aligned to a contact location on theintegrated circuit device to be tested. The probe wires are generallyfragile and easily deformed or damaged. This type of probe fixture istypically used for testing integrated circuit devices that have contactsalong the perimeter of the device. This type of probe is also muchlarger than the IC device that is being tested and the use of this typeof probe for high temperature testing is limited by the probe structureand material set. This is described with reference to applicant'sco-pending U.S. application Ser. No. 08/754,869 filed on Nov. 22, 1996,the teaching of which is incorporated herein by reference.

Another technique used for testing IC devices comprises a thin flexcircuit with metal bumps and fan out wiring. The bumps are typicallyformed by photolithographic processes and provide a raised contact forthe probe assembly. The bumps are used to contact the flat or recessedaluminum bond pads on the IC device. An elastomer pad is typically usedbetween the back of the flex circuit and a pressure plate or rigidcircuit board to provide compliance for the probe interface. This typeof probe is limited to flexible film substrate materials that typicallyhave one or two wiring layers. Also, this type of probe does not providea wiping contact interface to ensure a low resistance connection.

The aluminum bond pads on a high density IC device are typicallyrectangular in shape and are recessed slightly below the surface of thepassivation layer. If the wiping action of the high density probe is notcontrolled, the probe contact may move in the wrong direction and shortto an adjacent aluminum bond pad or the probe contact may move off ofthe aluminum bond pad onto the surface of the passivation layer andcause an open connection.

The position of the probe tips must be controlled to ensure accuratealignment of the probes to the interconnection pads on the IC device.During high temperature burn-in testing, the thermal expansion mismatchbetween the probe structure and the IC device must be small to ensurethat the probe position does not vary significantly over the burn-intemperature range. Thermal expansion mismatch within the probe structurecan result in contact reliability problems.

The challenges of probing a single high density integrated circuitdevice are further multiplied for multi-chip and full wafer testingapplications. Probe fabrication techniques and material selection arecritical to the thermal expansion and contact alignment considerations.A small difference in the thermal expansion of the substrate, wafer, andprobe construction will cause misalignment of the probe tip to the wafercontact pad. Compliance of the probe structure is another criticalfactor. Slight variations in the wafer metalization, warpage of thewafer, and slight variations in the probe height contribute to the totalcompliance requirements for the probe structure.

As the processing power of IC devices increases, the number of I/O andspeed of the I/O signals increases to meet this need. The use of highspeed signals and high density connections on an integrated circuitdevice provides an increased challenge to accurately test the functionof the device. High inductance of the test probes and cross talk betweenprobes can severely limit the ability to test high speed and highdensity chip connections. The inductance of the test probe can bereduced by reducing the probe length or by providing a probe structurethat has a shield ground. The integral shielding also helps to reducethe cross talk between high density probes and reduces the need to placegrounded probes between signal probes.

U.S. Pat. No. 5,177,439, issued Jan. 5, 1993 to Uu et al., is directedto fixtures for testing bare IC chips. The fixture is manufactured froma silicon wafer or other substrate that is compatible with semiconductorprocessing. The substrate is chemically etched to produce a plurality ofprotrusions to match the I/O pattern on the bare IC chip. Theprotrusions are coated with a conductive material and connected todiscrete conductive fanout wiring paths to allow connection to anexternal test system. The probe geometry described in this patent doesnot provide a compliant interface for testing the aluminum bond pads onthe IC device and does not provide a wiping contact interface. Thesubstrate used for fabrication of this probe fixture is limited tosemiconductor wafers which are relatively expensive. The high densityprobe with controlled wipe can be fabricated on a variety of inexpensivesubstrate with the fanout wiring.

Applicant's co-pending U.S. application Ser. No. 08/754,869 filed onNov. 22, 1996, the teaching of which is incorporated herein by referencedescribes a high density test probe for integrated circuit devices. Theprobe structure described in this docket uses short metal wires that arebonded on one end to the fan out wiring on a rigid substrate. The wiresare encased in a compliant polymer material to allow the probes tocompress under pressure against the integrated circuit device. The wireprobes are sufficiently long and formed at an angle to prevent permanentdeformation during compression against the integrated circuit device.

OBJECTS

It is the object of the present invention to provide a probe for testingintegrated circuit devices and other electronic components that userigid bond pads for the interconnection means.

Another object of the present invention is to provide a probe structurethat is an integral part of the fan out wiring on the test substrate orother printed wiring means to minimize the electrical conductor lengthas well as the contact resistance of the probe interface.

A further object of the present invention is to provide a probe with acompliant interface to compensate for slight variations in the rigidbond pad heights on the IC device and variations in the height of theprobe contacts.

An additional object of the present invention is to provide a raisedprobe tip for contacting recessed surfaces on the IC device.

Yet an another object of the present invention is to provide a probestructure that has low inductance and low cross talk electricalproperties.

Yet a further object of the present invention is to provide a probestructure that has an improved true position tolerance.

Yet an additional object of the present invention is to provide a probestructure that can be used for high performance and high frequencysingle chip or multiple chip wafer testing.

SUMMARY OF THE INVENTION

A broad aspect of the present invention is a structure having asubstrate having a surface; a plurality of elongated electricalconductors extending away from the surface; the elongated electricalhave a dielectric coating; and each of the elongated electricalconductors having a first end affixed to the surface and a second endprojecting away from the surface.

A more specific aspect of the structure according to the presentinvention includes a coating of an electrically conductive materialdisposed on the dielectric coating.

Another more specific aspect of the structure according to the structureof the present invention includes a means for electricallyinterconnection the electrically conductive coating on at least a partof said plurality of elongated electrical conductors.

Another more particular aspect of the present invention is an apparatusfor using the structure to test an electronic device having a means forholding the structure, means for retractably moving the structuretowards and away from the electronic device so that the second endscontact electrical contact locations on the electronic device andsubstrate.

Another broad aspect of the present invention is a method of providing asubstrate having a surface; providing a plurality of elongatedelectrical conductors each having a first end and a second end; bondingeach of the first ends to the surface so that the second ends aredisposed away from the surface; forming a dielectric coating on theelongated electrical conductors.

Another more specific aspect of the method according to the presentinvention further includes forming a coating of an electricallyconductive material on the dielectric coating.

BRIEF DESCRIPTION OF THE DRAWINGS

These and other objects, features, and advantages of the presentinvention will become apparent upon further consideration of thefollowing detailed description of the invention when read in conjunctionwith the drawing figures, in which:

FIG. 1 shows a cross section of the preferred embodiment of the highperformance test probe attached to a substrate and pressed against thealuminum bond pads on an integrated circuit device.

FIGS. 2-6 show the processes used to fabricate the compliant test probeon a fan out wiring substrate.

FIG. 7 shows a cross section of another embodiment of the highperformance test probe.

FIG. 8 shows a cross section of another embodiment of the highperformance test probe.

FIG. 9 shows a cross section of another embodiment of the highperformance test probe.

FIG. 10 is a top view of a probe structure showing clusters for chipsites on a wafer of chips.

FIG. 11 schematically shares a variety of shapes of probe wires usefulto practice the present invention, such as “S” showed “C” shaped,continuously curved, piece wire curved, piece wire linear andcombinations thereof.

FIG. 12 schematically shows alternative embodiments of compliant framestructure (17) to support probe tip positioning structure (20) to bemaintaining in position and to move as the probe tip ends (16) move whenthey are moved into engagement with electronic pads (31).

FIG. 13 schematically shows an apparatus for moving the probes accordingto the present invention into an out of electrical engagement with aworkpiece, such as on integrated circuit (IC), being tested.

FIG. 14-17 shows an electrochemical method of fabricating the structuresaccording to the present invention.

FIG. 18-20 show different structures for forming a corner connection forthe outer conductors made by the method of FIGS. 14-17.

DETAILED DESCRIPTION

FIG. 1 shows a cross section of a test substrate (11) and a highperformance test probe (10) according to the present invention. The testsubstrate (11) provides a rigid base for attachment of the probes (10)and fan out wiring from the high density array of probe contacts to alarger grid of pins or other interconnection means to the equipment usedto electrically test the integrated circuit device. The fan outsubstrate can be made from various materials and constructions includingsingle and multi-layer ceramic with thick or thin film wiring, siliconwafer with thin film wiring, and epoxy glass laminate construction withhigh density copper wiring. The test probes (10) are attached to thefirst surface (12) of the substrate (11). The probes are used toelectrically contact the aluminum bond pads (31) on the device (30)which is being tested. The device (30) under test, is preferably an ICchip. The bond pads (31) which are typically aluminum are typicallyrecessed slightly below the surface of the passivation layer (32) of theintegrated circuit device (30). The geometry of the compliant test probe(10) is optimized to provide a wiping contact interface to penetrate theoxides on the surface of the aluminum bond pads (31) to provide a lowresistance connection.

The test probe (10) is attached directly to the fan out wiring (13) onthe first surface (12) of the substrate (11) to minimize the resistanceof the probe interface. The probe geometry is optimized to provide aflexible contact interface that controls the direction and length of thewiping action. The probe wire (15) is surrounded by a polymer material(72) that provides additional support and elasticity to the angled wire(15). The polymer material (72) preferably completely encases the probewire (15) and the first surface (12) of the substrate (11) between theprobes (10) with the exception of the probe tip (16). A thin layer ofelectrically conductive material (90) preferably covers the surface ofthe polymer material (72) surrounding the probe wire (15) to provide anindividual ground shield for each of the probe wires (15). Theelectrically conductive material layer (90) is connected to groundterminals (92) on the surface (12) of the substrate (11). Grounding theelectrically conductive material (90) substantially prevents cross talkbetween rapidly time varying electrical signals from inducing anundesired electrical signal on an adjacent probe conductor. Thethickness and composition of the polymer material (72) can be varied tochange the elastic and electrical properties of the high performanceprobe (10). As the compliant high density probe (10) is pressed againstthe IC device (30), the probe wire (15) rotates slightly and the probetip (16) slides along the surface of the bond pads (31) of the IC device(30). The length of the sliding or wiping action is restricted by theangle and length of the probe wire (15) and the amount of compression ofthe probe (10). Since each of the probes (10) is separated from theadjacent probes, thermal expansion of the polymer material (72) is not afactor for high temperature applications such as burn-in. The polymermaterial (72) can be, for example, polyimide, polyamid-imide andfluorinated polymers such as teflon.

FIG. 2 shows a process used to fabricate the high performance testprobe. A thermosonic wire bonder tool is used to attach ball bonds (14)to the fan out wiring (13) on the first surface (12) of the rigidsubstrate (11). The wire bonder tool uses a first ceramic capillary (40)to press the ball shaped end of the bond wire (41) against the firstsurface (12) of the substrate (11). Compression force and ultrasonicenergy are applied through the first capillary (40) tip and thermalenergy is applied from the wire bonder stage through the substrate (11)to bond the ball shaped end of the bond wire (41) to the fan out wiring(13) on the first surface (12) of the substrate (11). The bond wire (41)is positioned at an angle and a shear blade (42) is used to sever thebond wire (41) to create an angled segment of wire (15) protrudingvertically from the ball bond (14). The movement of the ceramiccapillary (40) is controlled during this process to provide a shortstraight section of the wire (43) that is perpendicular to the surfaceof the rigid substrate (11).

FIG. 3 shows (preferably an argon-ion) laser (50) used to melt the endsof the short straight sections of the wire (43) to create a ball shapedcontact (16). The smooth surface of the ball shaped contact (16) isideal for a wiping interface. The size of the ball shaped contact (16)on the end of the probe wire (15) is controlled by the laser powerdensity and the alignment of the focal point from the tip of thestraight wire section (43).

FIG. 4 shows the process used to coat the ends of the ball shaped probecontacts with a protective material (62). Protective material (62) canbe a polymer such as polyimide, polyamide. The substrate (11) ispositioned over the container (60) of liquid protective material (61)with the ball shaped contacts (16) submersed in the liquid (61). Afterthe probe tips (16) are covered with the protective material (62), thesubstrate (11) is repositioned and a temporary dam (70) is placed aroundthe array of probe wires (15) as shown in FIG. 5. The cavity formed bythe temporary dam (70) is filled with a liquid polymer material (71)that produces a thin coating of polymer (72) on the probe wires (15).The process is controlled to create a conformal, uniform thickness ofthe polymer material such as paralyne (72) on each of the probe wires(15) and the first surface (12) of the substrate (11) between the probewires (15). Alternatively, the probe structure (10) after depositing theprotective coating (62) on the ends of wires (15), can be emersed into asolution while an electric potential is applied to the wires (15) toelectrolytically deposit a polymer such as a polyimide onto the surfaceof the wires (15). Useful processes are described in U.S. Pat. No.5,152,880 and U.S. Pat. Nos. 5,021,129, 5,242,713 and 5,242,551, theteaching of which is incorporated herein by reference.

FIG. 6 shows the process step for adding the electrically conductivelayer (90) on the surface of the polymer material (72). The conductivelayer (90) can be added by electroless plating, electrophoretic plating,sputtering, or evaporation processes using palladium, chrome, copper, orother conductive materials. Conductive polymers can also be used as theground layer (90) on the surface of the insulating polymer material(72). After adding the conductive layer (90), the protective coating(62) on the probe tips (16) is removed to expose the ball shapedcontacts (16). Coating (62) can be a water soluble wax or other waxwhich can be later removed by commonly known techniques.

When an electroactive material such as polyimide is used for layer (72),electrically conductive layer (90) can be electrochemically deposited bythe methods described in U.S. Pat. No. 5,242,713, the teaching of whichis incorporated herein by reference. When a halogenated polymer materialsuch as perflorinated polymer, such as Teflon (Dupont RegisteredTrademark) is used as dielectric layer (70), an electrically conductivelayer can be electrochemically disposed thereon according to theteaching of U.S. Pat. No. 5,374,454, the teaching of which isincorporated herein by reference.

FIG. 7 shows a cross section of another embodiment of the highperformance test probe (110). This embodiment (110) uses the sameconstruction as the embodiment (10) of FIG. 1 without the conductivelayer (90) on the surface of the polymer material (72). While theelectrical performance of this embodiment is not as good as thepreferred embodiment, lower fabrication costs are the main advantage. Inthis embodiment the coating (72) can also be a material with highelasticity such as a stiff metal such as Invar, Cu/Invar/Cu, nickelwhich will enhance the flexibility of the elongated conductor (15).

FIG. 8 shows a cross section of another embodiment of the highperformance test probe (120). This embodiment uses a thin sheet (81)(preferably Invar) to control the accuracy of the probe tip (16)positions. Sheet (81) can be any material such as a metal, a polymer, aglass and a ceramic. Invar is chosen to provide a TCE that is closelymatched to the TCE of the silicon wafer IC (30) to be tested. Othermaterials with a TCE in the range of 2 to 8 ppm can also be used for thesurface layer (81). A plurality of holes (82) are formed in the thinsheet (81) and are aligned with the corresponding probe tips (16). Thethin Invar sheet (81) is supported by an elastomer frame (80)surrounding the array of probes. The thin invar sheet (81) can also becoated or laminated with a thin layer of polymer material on both thetop and bottom sides to insulate the sheet (81) from the probe tip (16).

FIG. 9 shows a cross section of another embodiment of the highperformance test probe (130). This embodiment is similar to theembodiment of FIG. 7 in that it uses a thin Invar sheet (81) to controlthe accuracy of the probe tip (16) positions. This embodiment also usesa compliant conductive polymer (83), such as conductive siloxane or aconductive foam elastomer, to fill the cavity between the probe wires(15) that is formed by the elastomer frame (80) and the thin sheet (81).The compliant conductive polymer (83) is in contact with a groundterminal (92) on the first surface (12) of the substrate (11) andprovides a ground shield for each of the probe wires (15). Electricallyconductive polymers are described in U.S. Pat. No. 5,198,153, theteaching of which is incorporated herein by reference.

As shown in FIG. 13 a structure such as shown in FIG. 3 is immersed in atank (1302) containing an electrolytic solution (1304) such as describedin U.S. Pat. No. 5,152,880 to deposit a polyimide from polyimidesolution or a polyimide from a polyisomide as described in U.S. Pat.Nos. 5,021,129, 5,242,713 and 5,242,551, the teachings of which areincorporated herein by reference. As described in these patents theappropriate currents and biases are applied to the wires (15) byapplying the currents and voltages to contact pads such as contact pads(1317) which are electrically connected to each of the wires (15) toresult in a polymer coating 1402 of FIG. 14. The structure 1404 of FIG.14 with polymer coated wires (1406) can then be immersed in anelectrolytic solution such as described in U.S. Pat. No. 5,242,713 todeposit a metal coating such as a copper coating on the polymer coating1402. This can be achieved by replacing solution 1304 in FIG. 14 withthe solution of U.S. Pat. No. 5,242,713 and applying the appropriatebias and current to contact 1317 to result in the structure of FIG. 15with dielectric coating 1404 coated with electrical conductor 1502. Whenthe structure of FIG. 15 is removed from tank 1302, protective layer 62can be removed as described above to result in the structure of FIG. 16.

As described with reference to FIG. 9 the space between the elongatedconductors can be filled with a material (1704). The material can be anelectrically conductive polymer which provides a common electricalconnection between electrically conductive layer (1502) on elongatedconductors 15. The material 1704 can be electrically contacted bycontact pad (1702). Alternatively, material 1704 can be a dielectricmaterial filled with electrically conductive particles 1706 such asmetal particles. Alternatively, material (1704) can be a blend of adielectric polymer and an electrically conductive polymer.Alternatively, a sheet (1808) such as (81) of FIG. 9 can be disposedover the ends of the coaxial elongated conductor as shown in FIG. 18.Sheet (1808) can be an electrical conductor or a multilayer sheet havinga dielectric and electrical conductor layer. Sheet (1802) can be bondedto outer conductor (1502) with an electrically conductive adhesive orsolder bond at location (1804) to form a common electrical connectionbetween the outer conductors (1402) of each coaxial elongated conductor(1806). Electrical contact can be made to sheet (1802) such as at 1810to hold it at a fixed potential as described in the referencesincorporated herein by reference below. Substrate (11) can be designedso that electrically conductive pads (21) on surface (19) areelectrically connected to elongated conductors (15) to thereby provide abias for the electrochemical processes. Alternatively, as shown in FIG.15 of the electrochemical deposition of electrically conductive layer1502 is allowed to proceed long enough and if the electricallyconductive pads (1902) shown in FIG. 19 are close enough theelectrically conductive layers (1502) on adjacent elongated conductors(15) will bridge the gap between pads (1502) and merge as shown atlocation (1704) to form a common outer electrical conductor which can bebiased to a common potential as shown at location (1906). Alternatively,in FIG. 14 protection layer (62) can be eliminated. If the centerelongated conductor (15) is completely immersed in the solution of FIG.13, the conductor (15) will be completely coated with dielectric layer(1406) and electrically conductive layer (1502). The coated ends ofelongated conductor (15) are dipped into etchants to remove the layers1402 and 1502 at the ends to result in the structure of FIG. 17.Alternatively, a laser can be used to burn off or volatilize the layers1402 and 1502 at the ends of elongated conductors 15. Alternatively,these layers can be abraded away.

FIG. 17 schematically shows an apparatus for moving probe structure 10towards and away from electronic device 204 so that probe tips 210engage and disengage electrical contact locations 212 on electronicdevice 204. Probe 20 is mounted on to holder 200 having means 214 forapplying electric power to the probe tips 210. Electronic device 206 isheld on base 206. Holder 200 is physically connected to support 202which is converted to arm 208 which is converted to base 206. Support202 is adapted for use and down movement. Examples of an apparatus toprovide the means for support and up and down movement can be found inU.S. Pat. No. 5,439,161 and U.S. Pat. No. 5,132,613, the teachings ofwhich are incorporated herein by reference.

These electrically conductive polymers can be combined with elastomericmaterials to form elastomeric electrically conductive polymericmaterials.

Other embodiments of the high performance test probe are possible bychanging the geometry of the probe wire or the probe tip. The probe wirecan be angled, curved, or straight and the probe tip can be ball shaped,straight, or flattened.

The teaching of the following patent co-pending applications areincorporated herein by reference: [0057] U.S. Pat. No. 5,371,654entitled, “THREE DIMENSIONAL HIGH PERFORMANCE INTERCONNECTION PACKAGE”;[0058] U.S. patent application Ser. No. 08/614,417 entitled, “HIGHDENSITY CANTILEVERED PROBE FOR ELECTRONIC DEVICES”; U.S. patentapplication Ser. No. 08/641,667 entitled, “HIGH DENSITY TEST PROBE WITHRIGID SURFACE STRUCTURE”; [0060] U.S. patent application Ser. No.08/527,733 entitled, “INTERCONNECTOR WITH CONTACT PADS HAVING ENHANCEDDURABILITY”; [0061] U.S. patent application Ser. No. 08/752,469entitled, “FOAMED ELASTOMERS FOR WAFER PROBING APPLICATIONS ANDINTERPOSER CONNECTORS”; [0062] U.S. patent application Ser. No.08/744,903 entitled, “INTEGRAL RIGID CHIP TEST PROBE”; [0063] U.S.patent application Ser. No. 08/756,831 entitled, “HIGH TEMPERATURE CHIPTEST PROBE”; [0064] U.S. patent application Ser. No. 08/756,830entitled, “A HIGH DENSITY INTEGRAL TEST PROBE AND FABRICATION METHOD”;[0065] U.S. patent application Ser. No. 08/754,869 entitled, “HIGHDENSITY INTEGRATED CIRCUIT APPARATUS, TEST PROBE AND METHODS OF USETHEREOF”.

It is to be understood that the above described embodiments are simplyillustrative of the principles of the invention. Various othermodifications and changes may be devices by those of skill in the artwhich will embody the principles of the invention and fall within thespirit and scope thereof.

1-60. (canceled)
 61. A structure comprising: a substrate having asurface; a plurality of elongated electrical conductors extending awayfrom said surface; each of said elongated electrical conductors having afirst end affixed to said surface and a second end projecting away fromsaid surface; said elongated electrical conductor having a dielectriccoating disposed thereon so that said second end is not coated with saiddielectric coating; a coating of an electrically conductive materialdisposed on said dielectric coating and on said surface to form aplurality of coaxial elongated electrical conductors having electricallycommon outer conductors.
 62. A structure comprising: a substrate havinga surface; a plurality of elongated electrical conductors extending awayfrom said surface; each of said elongated electrical conductors having afirst end affixed to said surface and a second end projecting away fromsaid surface; said elongated electrical conductor having a dielectriccoating disposed thereon so that said second end is not coated with saiddielectric coating; a sheet of material having a plurality ofthrough-holes therein; said sheet of material is disposed so that saidsecond ends extend through said through-holes; a coating of a firstelectrically conductive material disposed on said dielectric coating;said sheet of material comprising a second electrically conductivematerial; said first electrically conductive material disposed on saiddielectric coating being electrically connected to said secondelectrically conductive material.
 63. (canceled)
 64. (canceled) 65.(canceled)
 66. A structure comprising: a substrate having a surface; aplurality of elongated electrical conductors extending away from saidsurface; a substantially continuous dielectric coating disposed on eachof said plurality of elongated electrical conductors and on saidsurface; each of said elongated electrical conductors having a first endaffixed to fan out wiring on said surface and a second end projectingaway from said surface; said second end is not coated with saiddielectric coating; a coating of an electrically conductive materialdisposed on said dielectric coating forming a plurality of coaxialstructures; a material disposed between said plurality of coaxialstructures.
 67. A structure according to claim 66, wherein saidsubstantially continuous dielectric coating is directly in contact withsaid fan out wiring and said surface and said continuous dielectriccoating comprises an organic polymeric material comprising redox sites.68. A structure according to claim 67, wherein said coating of saidelectrically conductive material is a continuous coating disposed onsaid dielectric coating disposed on said elongated electrical conductorsand on said dielectric coating disposed on said surface.
 69. A structureaccording to claim 67, wherein said polymeric dielectric coatingcomprises redox sites sites; and said continuous dielectric coating isdirectly in contact with said fan out wiring and said surface. 70.(canceled)
 71. (canceled)
 72. (canceled)
 74. (canceled)
 76. (canceled)77. (canceled)
 78. A structure according to claim 66, wherein saidsecond end of said elongated electrical conductor is on the same side ofsaid substrate as said surface.
 79. A structure according to claim 69,wherein said second end of said elongated electrical conductor is on thesame side of said substrate as said surface.
 80. (canceled) 81.(canceled)
 82. (canceled)
 83. (canceled)
 84. (canceled)
 85. (canceled)86. A structure according to claim 66, wherein said substrate has aperimeter, said second end is positioned with respect to said surface sothat a perpendicular line from said second end intersects said surfacewithin said perimeter.
 87. (canceled)
 88. (canceled)
 89. (canceled) 90.(canceled)
 91. (canceled)
 92. (canceled)
 93. (canceled)
 94. (canceled)95. (canceled)
 96. A structure according to claim 62, wherein saidsubstrate has a perimeter, said second end is positioned with respect tosaid surface so that a perpendicular line from said second endintersects said surface within said perimeter.
 97. A structure accordingto claim 61, wherein said substrate has a perimeter, said second end ispositioned with respect to said surface so that a perpendicular linefrom said second end intersects said surface within said perimeter. 98.(canceled)
 99. (canceled)
 100. (canceled)
 101. A structure according toclaim 66 wherein said dielectric coating has a substantially uniformthickness and a structure of an electochemically formed dielectriccoating.
 102. (canceled)
 103. (canceled)
 104. (canceled)
 104. Astructure according to claim 66 wherein said material is elastomeric.105. A structure according to claim 66 wherein said material iselectrically conductive and makes electrical contact with said coatingof an electrically conductive material.
 106. A structure according toclaim 105 further including an electrical contact location electricallycoupled to said material permitting an electrical potential to beapplied to said material.
 107. A structure according to claim 62 whereinsaid sheet of material is electrically connected to said coating of saidfirst electrically conductive material.
 108. A structure according toclaim 62 further including an electrical contact location electricallycoupled to said sheet permitting an electrical potential to be appliedto said material.